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| 2SK1298 Silicon N-Channel MOS FET Application TO-3PFM High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 20 40 160 40 50 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1298 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK1297. |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 22 -- -- -- -- -- -- -- -- -- 0.015 0.02 35 3600 1850 450 30 170 700 350 1.2 2.0 0.018 0.025 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 40 A, VGS = 0 IF = 40 A, VGS = 0, diF/dt = 50 A/s ID = 20 A, VGS = 10 V, RL = 1.5 V -------------------------------------------------------------------------------------- ---------------------- --------------------- ID = 20 A, VGS = 4 V * ID = 20 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 155 -- ns -------------------------------------------------------------------------------------- 2SK1298 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Maximum Safe Operation Area 500 200 Drain Current ID (A) 100 1 10 PW 10 m s 0 10 s 40 50 20 10 5 s = D C 1 s( m O pe ra Sh 20 tio ot ) 0 50 100 Case Temperature TC (C) 150 (T C = Operation in this area 25 2 C is limited by RDS (on) ) 1.0 Ta = 25C 0.5 1.0 3 10 100 0.1 0.3 30 Drain to Source Voltage VDS (V) n Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 TC = 25C 0.2 0.1 0.05 ch-c (t) = s (t) * ch-c ch-c = 2.50C/W, TC = 25C PDM 0.03 0.01 10 0.02 0.01 1S h ul ot P se 1m 10 m Pulse Width PW (s) 100 m T PW 1 D =PW T 10 100 |
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